Band gap engineering of MoS2 upon compression
نویسندگان
چکیده
منابع مشابه
Band gap engineering of MoS2 upon compression
We study the electronic structure of MoS2 upon both compressive and tensile strains with firstprinciples density-functional calculations. We consider monolayer, bilayer, few-layer and bulk MoS2 in the ±15 % strain range, relevant for recent experiments. We assess the stability of the compression calcualting the critical strain that results in the on-set of buckling for nanoribbons of different ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2016
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4948376